Substrate temperature influenced physical properties of silicon MOS devices with TiO₂ gate dielectricSEKHAR, M. Chandra; KONDAIAH, P; JAGADEESH CHANDRA, S. V et al.Surface and interface analysis. 2012, Vol 44, Num 9, pp 1299-1304, issn 0142-2421, 6 p.Article

Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrateXINHONG YU; ZHE WANG; SUNYANG YU et al.Applied surface science. 2011, Vol 257, Num 22, pp 9264-9268, issn 0169-4332, 5 p.Article

Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growthMORIYAMA, Yoshihiko; HIRASHITA, Norio; USUDA, Koji et al.Applied surface science. 2009, Vol 256, Num 3, pp 823-829, issn 0169-4332, 7 p.Article

Elimination of GeO₂ and Ge₃N₄ interfacial transition regions and defects at n-type Ge interfaces : A pathway for formation of n-MOS devices on Ge substratesLUCOVSKY, G; LEE, S; LONG, J. P et al.Applied surface science. 2008, Vol 254, Num 23, pp 7933-7937, issn 0169-4332, 5 p.Conference Paper

Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applicationsHASEGAWA, Hideki; AKAZAWA, Masamichi.Applied surface science. 2008, Vol 254, Num 12, pp 3653-3666, issn 0169-4332, 14 p.Conference Paper

A simple route to the synthesis of crystalline InS nanowires from indium foilDATTA, Anuja; GORAI, Soma; SUBHENDU KUMAR PANDA et al.Crystal growth & design. 2006, Vol 6, Num 4, pp 1010-1013, issn 1528-7483, 4 p.Article

The effect of AlN growth time on the electrical properties of Al_0.38Ga_0.62N/AlN/GaN HEMT structuresCUIMEI WANG; XIAOLIANG WANG; GUOXIN HU et al.Journal of crystal growth. 2006, Vol 289, Num 2, pp 415-418, issn 0022-0248, 4 p.Article

Ultrathin CdSe nanowire field-effect transistorsKHANDELWAL, Anubhav; JENA, Debdeep; GREBINSKI, James W et al.Journal of electronic materials. 2006, Vol 35, Num 1, pp 170-172, issn 0361-5235, 3 p.Article

Extraction of SiO₂/SiC interface trap profile in 4H- and 6h-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°CYANQING DENG; WEI WANG; QIZHI FANG et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 618-624, issn 0361-5235, 7 p.Article

Rare-earth gate oxides for GaAs MOSFET applicationKWON, Kwang-Ho; YANG, Jun-Kyu; PARK, Hyung-Ho et al.Applied surface science. 2006, Vol 252, Num 21, pp 7624-7630, issn 0169-4332, 7 p.Conference Paper

High performance LTPS TFT with very large grains produced by sequential lateral crystallizationPARK, S. J; KING, S. H; KU, Y. M et al.EPJ. Applied physics (Print). 2005, Vol 31, Num 3, pp 165-168, issn 1286-0042, 4 p.Article

Defects and defect relaxation at internal interfaces between high-k transition metal and rare earth dielectrics and interfacial native oxides in metal oxide semiconductor (MOS) structuresLUCOVSKY, G; PHILLIPS, J. C.Thin solid films. 2005, Vol 486, Num 1-2, pp 200-204, issn 0040-6090, 5 p.Conference Paper

Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistorsYAGINUMA, S; YAMAGUCHI, J; ITAKA, K et al.Thin solid films. 2005, Vol 486, Num 1-2, pp 218-221, issn 0040-6090, 4 p.Conference Paper

A selective electrochemical approach to carbon nanotube field-effect transistorsBALASUBRAMANIAN, Kannan; SORDAN, Roman; BURGHARD, Marko et al.Nano letters (Print). 2004, Vol 4, Num 5, pp 827-830, issn 1530-6984, 4 p.Article

Control of catalytic reactions at the surface of a metal oxide nanowire by manipulating electron density inside itZHANG, Y; KOLMAKOV, A; CHRETIEN, S et al.Nano letters (Print). 2004, Vol 4, Num 3, pp 403-407, issn 1530-6984, 5 p.Article

Extraordinary mobility in semiconducting carbon nanotubesDURKOP, T; GETTY, S. A; COBAS, Enrique et al.Nano letters (Print). 2004, Vol 4, Num 1, pp 35-39, issn 1530-6984, 5 p.Article

Influence of Si₃N₄ passivation on surface trapping in SiC metal-semiconductor field-effect transistorsCBA, Ho-Young; CHOI, Y. C; THOMPSON, R. M et al.Journal of electronic materials. 2004, Vol 33, Num 8, pp 908-911, issn 0361-5235, 4 p.Article

Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFETKAUSHIK, Navneet; HALDAR, Subhasis; GUPTA, Mridula et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 373-379, issn 0268-1242, 7 p.Article

Scalable interconnection and integration of nanowire devices without registrationSONG JIN; DONGMOK WHANG; MCALPINE, Michael C et al.Nano letters (Print). 2004, Vol 4, Num 5, pp 915-919, issn 1530-6984, 5 p.Article

Tuning electronic properties of In₂O₃ nanowires by doping controlLEI, B; LI, C; ZHANG, D et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 3, pp 439-442, issn 0947-8396, 4 p.Article

Influence of epitaxy on the surface conduction of diamond filmKASU, M; KUBOVIC, M; ALEKSOV, A et al.Diamond and related materials. 2004, Vol 13, Num 2, pp 226-232, issn 0925-9635, 7 p.Conference Paper

Modelling the short-circuit current of polymer bulk heterojunction solar cellsGEENS, Wim; MARTENS, Tom; POORTMANS, Jef et al.Thin solid films. 2004, Vol 451-52, pp 498-502, issn 0040-6090, 5 p.Conference Paper

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si₃N₄ passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistorsTAN, W. S; HOUSTON, Pa; HILL, G et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 400-407, issn 0361-5235, 8 p.Conference Paper

Metal gate technology for nanoscale transistors: material selection and process integration issuesYEO, Yee-Chia.Thin solid films. 2004, Vol 462-63, pp 34-41, issn 0040-6090, 8 p.Conference Paper

Ni(Pt) alloy silicidation on (100) Si and poly-silicon linesPEY, K. L; LEE, P. S; MANGELINCK, D et al.Thin solid films. 2004, Vol 462-63, pp 137-145, issn 0040-6090, 9 p.Conference Paper